advanced power n-channel enhancement mode electronics corp. power mosfet low gate charge bv dss 30v simple drive requirement r ds(on) 6m fast switching characteristic i d 75a rohs compliant & halogen-free description absolute maximum ratings@t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 1.4 /w rthj-a 40 /w rthj-a maximum thermal resistance, junction-ambient 6 2 /w data & specifications subject to change without not ice ap85t03gs/p-hf thermal data parameter operating junction temperature range storage temperature range drain current, v gs @ 10v 55 pulsed drain current 1 350 total power dissipation 107 -55 to 175 linear derating factor gate-source voltage + 20 drain current, v gs @ 10v 75 rating halogen-free product drain-source voltage 30 201501157 0.7 1 -55 to 175 maximum thermal resistance, junction-ambient (pcb m ount) 3 parameter g d s g d s to-263(s) g d s to-220(p) ap85t03 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on-resis tance and fast switching performance. it provides the designer with a n extreme efficient device for use in a wide range of power a pplications. the to-263 package is widely preferred for all commercial-i ndustrial surface mount applications using infrared reflow techniqu e and suited for high current application due to the low connection resis tance. the through-hole version (ap85t03gp) are available for low-pr ofile applications.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v ? bv dss / ? t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.018 - v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =45a - - 6 m v gs =4.5v, i d =30a - - 10 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =30a - 55 - s i dss drain-source leakage current v ds =30v, v gs =0v - - 1 ua drain-source leakage current (t j =125 o c) v ds =24v, v gs =0v - - 250 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =30a - 33 52 nc q gs gate-source charge v ds =24v - 7.5 nc q gd gate-drain ("miller") charge v gs =4.5v - 24 nc t d(on) turn-on delay time v ds =15v - 11.2 - ns t r rise time i d =30a - 77 - ns t d(off) turn-off delay time r g =3.3 ,v gs =10v - 35 - ns t f fall time r d =0.5 - 67 - ns c iss input capacitance v gs =0v - 2700 4200 pf c oss output capacitance v ds =25v - 550 - pf c rss reverse transfer capacitance f=1.0mhz - 380 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =45a, v gs =0v - - 1.3 v t rr reverse recovery time i s =30a, v gs =0 v , - 28 - ns q rr reverse recovery charge di/dt=100a/s - 10 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse width < 300us , duty cycle < 2%. this product is sensitive to electrostatic discharg e, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized . apec does not assume any liability arising out of t he application or use of any product or circuit des cribed herein; neither does it convey any license under it s patent rights, nor the rights of others. apec reserves the right to make changes without fur ther notice to any products herein to improve reliability, function or design. 2 ap85t03gs/p-hf 3.surface mounted on 1 in 2 copper pad of fr4 board
ap85t03gs/p-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltag e fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 3 5 7 9 11 13 2 4 6 8 10 v gs , gate-to-source voltage (v) r ds(on) (m ? ) i d =30a t c =25 0 0.4 0.8 1.2 1.6 2 -50 25 100 175 t j ,junction temperature ( o c) v gs(th) (v) 0 50 100 150 200 250 300 0 1 2 3 4 5 6 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c v g =4.0v 4.5v 10v 7.0v 6.0v 0 50 100 150 0 1 2 3 4 5 v ds , drain-to-source voltage (v) i d , drain current (a) v g =4.0v 4.5v 10v 7.0v 6.0v t c = 175 o c 0.5 1.0 1.5 2.0 -50 0 50 100 150 200 t j , junction temperature ( o c) normalized r ds(on) v g =10v i d =45a 0 10 20 30 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) is (a) t j =25 o c t j =175 o c
ap85t03gs/p-hf fig 7. gate charge characteristics fig 8. typical capacitance characterist ics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 100 1000 10000 1 6 11 16 21 26 31 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss 0 2 4 6 8 10 12 0 10 20 30 40 50 60 70 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =15v v ds =20v v ds =24v i d =30a 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty=0.5 single pulse 1 10 100 1000 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc operation in this area limited by r ds(on)
marking information to-263 to-220 5 ap85t03gs/p-hf part number package code meet rohs requirement for low voltage mosfet only date code (ywwsss) y last digit of the year ww week sss sequence 85t03gs ywwsss part number package code meet rohs requirement for low voltage mosfet only 85t03gp ywwsss date code (ywwsss) y last digit of the year ww week sss sequence
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